tn2460l/tn2460t vishay siliconix document number: 70205 s-04279?rev. d , 16-jul-01 www.vishay.com 11-1 n-channel 240-v (d-s) mosfet
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d min (ma) tn2460l 60 @ v gs = 10 v 0.5 to 1.8 75 tn2460t 240 60 @ v gs = 10 v 0.5 to 1.8 51
low on-resistance: 40 secondary breakdown free: 260 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature ?run-away? high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control to-226aa (to-92) top view s d g 1 2 3 g s d top view 2 3 to-236 (sot-23) 1 tn2460l device marking front view ?s? tn 2406l xxyy ?s? = siliconix logo xxyy = date code marking code: t2 wll t2 = part number code for tn2460t w = week code ll = lot traceability
parameter symbol tn2460l tn2460t unit drain-source voltage v ds 240 240 gate-source voltage v gs 20 20 v t a = 25 c 75 51 continuous drain current (t j = 150 c) t a = 100 c i d 48 32 ma pulsed drain current a i dm 800 400 t a = 25 c 0.8 0.36 power dissipation t a = 100 c p d 0.32 0.14 w thermal resistance, junction-to-ambient r thja 156 350 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature.
tn2460l/tn2460t vishay siliconix www.vishay.com 11-2 document number: 70205 s-04279 ? rev. d , 16-jul-01
limits parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 240 260 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.5 1.65 1.8 v v ds = 0 v, v gs = 20 v 10 gate-body leakage i gss t j = 125 c 5 na v ds = 120 v, v gs = 0 v 0.1 zero gate voltage drain current i dss t j = 125 c 5 a v ds = 10 v, v gs =10 v 75 140 on-state drain current b i d(on) v ds = 10 v, v gs = 4.5 v 20 130 ma v gs = 10 v, i d = 0.05 a 38 60 drain-source on-resistance b r ds(on) v gs = 4.5 v, i d = 0.02 a 40 60 t j = 125 c 75 120 forward transconductance b g fs v ds = 10 v, i d = 0.05 a 30 70 ms dynamic input capacitance c iss 14 30 output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz 4 15 pf reverse transfer capacitance c rss 1 10 switching c turn-on time t on v dd = 25 v, r l = 500 8 20 turn-off time t off v dd = 25 v, r l = 500 i d 0.05 a, v gen = 10 v, r g = 25 20 35 ns notes a. for design aid only, not subject to production testing. vndn24 b. pulse test: pw 80 s duty cycle 1%. c. switching time is essentially independent of operating temperature.
tn2460l/tn2460t vishay siliconix document number: 70205 s-04279 ? rev. d , 16-jul-01 www.vishay.com 11-3 output characteristics transfer characteristics normalized on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v ds ? drain-to-source voltage (v) i d ? drain current (a) t j ? junction temperature ( c) 200 0 4 8 12 16 20 160 120 80 40 0 v gs = 10 v 4 v 3 v 2 v 100 80 60 0 01 5 40 20 234 v ds = 15 v 125 c t j = ? 55 c 100 0 4 8 12 16 20 90 80 70 30 60 50 40 10 ma 50 ma i d = 100 ma on-resistance vs. drain current 125 100 75 0 0 50 250 50 25 100 150 200 v gs = 10 v 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 4.5 v i d = 50 ma threshold region v gs ? gate-source voltage (v) 10 1 0.01 0.75 1 2.5 0.1 1.25 1.5 1.75 2 2.25 ? 55 c t j = 150 c v ds = 5 v 25 c 75 c 25 c i d ? drain current (ma) i d ? drain current (ma) r ds(on) ? on-resistance ( ? ) r ds(on) ? on-resistance ( ? ) i d ? drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
tn2460l/tn2460t vishay siliconix www.vishay.com 11-4 document number: 70205 s-04279 ? rev. d , 16-jul-01 10 k 1 0.01 0.1 0.1 1 100 10 1 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge drive resistance effects on switching normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) r g ? gate resistor ( ) v ds ? drain-to-source voltage (v) q g ? total gate charge (pc) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 20 16 12 0 010 50 8 4 20 30 40 v gs = 0 v f = 1 mhz c iss c oss c rss 15.0 12.5 10.0 0 0 50 300 7.5 5.0 100 150 200 2.5 250 i d = 30 ma v ds = 100 v 192 v load condition effects on switching i d ? drain current (a) 10 50 100 100 10 1 20 50 20 5 2 v dd = 25 v r g = 25 v gs = 0 to 10 v t f t d(off) t r t d(on) 10 50 10 1 20 50 2 v dd = 25 v r l = 500 v gs = 0 to 10 v i d = 50 ma t f t d(off) t r t d(on) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns) t ? switching time (ns)
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